Title :
Monte Carlo simulation of the CHISEL flash memory cell
Author :
Bude, Jeff D. ; Pinto, Mark R. ; Smith, R. Kent
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
fDate :
10/1/2000 12:00:00 AM
Abstract :
This work shows how physically-based hot carrier simulation was used to understand the importance of CHannel Initiated Secondary ELectron (CHISEL) injection in scaled MOSFETs, and how it was used to develop a powerful CHISEL-based technique for low voltage flash programming. Furthermore, it is shown how CHISEL flash addresses many of the disadvantages of CHE programming techniques, making it an ideal candidate for low-voltage, low-power Gigabit flash memories
Keywords :
MOS memory circuits; MOSFET; Monte Carlo methods; PLD programming; flash memories; hot carriers; low-power electronics; semiconductor device models; CHISEL flash memory cell; CHISEL-based technique; LV gigabit flash memories; Monte Carlo simulation; channel initiated secondary electron injection; low voltage flash programming; low-power flash memories; low-voltage flash memories; physically-based hot carrier simulation; scaled MOSFETs; Channel hot electron injection; Dielectrics and electrical insulation; Flash memory; Flash memory cells; Hot carriers; Low voltage; MOSFETs; Nonvolatile memory; Semiconductor memory; Temperature control;
Journal_Title :
Electron Devices, IEEE Transactions on
