DocumentCode :
1385827
Title :
Theory of the Monte Carlo method for semiconductor device simulation
Author :
Kosina, Hans ; Nedjalkov, Michail ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
Volume :
47
Issue :
10
fYear :
2000
fDate :
10/1/2000 12:00:00 AM
Firstpage :
1898
Lastpage :
1908
Abstract :
A brief review of the semiclassical Monte Carlo (MC) method for semiconductor device simulation is given, covering the standard MC algorithms, variance reduction techniques, the self-consistent solution, and the physical semiconductor model. A link between physically based MC methods and the numerical method of MC integration is established. The integral representations the transient and the steady-state Boltzmann equations are presented as well as the corresponding conjugate equations. The structure of the iteration terms of the Neumann series and their evaluation by MC integration is discussed. Using this formal mathematical approach, the standard algorithms and variety of new algorithms are derived. The basic ideas of the weighted ensemble MC and the MC backward algorithms are explained
Keywords :
Boltzmann equation; Monte Carlo methods; semiconductor device models; Boltzmann equation; Monte Carlo simulation; Neumann series; backward algorithm; carrier transport; iterative method; numerical integration; semiconductor device model; small-signal analysis; weighted ensemble algorithm; Analytical models; Boltzmann equation; Discrete event simulation; Distribution functions; Integral equations; Monte Carlo methods; Scattering; Semiconductor devices; Signal analysis; Steady-state;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.870569
Filename :
870569
Link To Document :
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