A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current

Author

Ouyang, Qiqing ; Chen, Xiangdong ; Mudanai, Sivakumar P. ; Wang, Xin ; Kencke, David L. ; Tasch, Al F. ; Register, Leonard F. ; Banerjee, Sanjay Kumar

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

47

Issue

10

fYear

2000

fDate

10/1/2000 12:00:00 AM

Firstpage

1943

Lastpage

1949

Abstract

A novel Si/SiGe bandgap engineered pMOSFET structure, called a high mobility heterojunction transistor (HMHJT), is proposed. Reduced short-channel effects and high drive current are predicted in this new device. Simulation results of devices with 100-nm physical gate lengths are presented. Physical effects are illustrated, and the performance is compared to the conventional Si devices. For low standby power or low leakage (high V_T) applications, the off-state leakage current due to drain induced barrier lowering (DIBL) or bulk punchthrough is substantially suppressed, and a very high I_on/I_off ratio of 6×10⁷ is obtained in a HMHJT without any anti-punchthrough implant. This ratio is a factor of 180 higher than that of a fabricated, conventional Si device with a similar threshold voltage found in the literature. On the other hand, for lower operating power (low V_T) applications, an HMHJT has a drive current 80% higher compared to an optimized Si device, while satisfying the same criteria for the off-state leakage current

Keywords

Ge-Si alloys; MOSFET; elemental semiconductors; quantum well devices; semiconductor device models; semiconductor materials; silicon; 100 nm; DIBL; Si-SiGe-Si; Si-SiGe-Si QW channel; Si/SiGe heterojunction pMOSFET; bandgap engineered PMOSFET structure; bulk punchthrough; drain induced barrier lowering; drive current enhancement; high mobility heterojunction transistor; low leakage applications; low standby power applications; lower operating power applications; offstate leakage current suppression; p-channel device; quantum-well channel; short-channel effects reduction; threshold voltage; Germanium silicon alloys; Heterojunctions; Implants; Leakage current; MOSFET circuits; Material properties; Molecular beam epitaxial growth; Photonic band gap; Silicon germanium; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.870577

Filename

870577