• DocumentCode
    1385929
  • Title

    Viscoelastic material behavior: models and discretization used in process simulator DIOS

  • Author

    Pomp, Andreas ; Zelenka, Stefan ; Strecker, Norbert ; Fichtner, Wolfgang

  • Author_Institution
    Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
  • Volume
    47
  • Issue
    10
  • fYear
    2000
  • fDate
    10/1/2000 12:00:00 AM
  • Firstpage
    1999
  • Lastpage
    2007
  • Abstract
    It is a known fact that melted glass, such as SiO2, shows viscoelastic behavior. But in the range of processing temperatures the mechanical properties of SiO2 vary strongly. While below 800°C the material behaves like an elastic solid, at temperatures above 1000°C it shows nearly pure viscous properties. In this paper, the governing equation, the so-called constitutive equation, describing viscoelastic behavior, and its discretization are presented. The oxide viscosity depends on the local amount of shear stresses which leads to inhomogeneous material behavior and a nonlinear theory. This new mechanical model was implemented into the process simulator DIOS-ISE. Some obtained simulation results are shown and discussed
  • Keywords
    glass; oxidation; semiconductor process modelling; silicon compounds; viscoelasticity; 800 to 1000 C; DIOS process simulator; SiO2; SiO2 melted glass; constitutive equation; discretization; inhomogeneous material; mechanical properties; nonlinear theory; numerical model; oxidation; shear stress; viscoelasticity; viscosity; Crystalline materials; Elasticity; Geometry; Mechanical factors; Modeling; Nonlinear equations; Stress; Temperature distribution; Temperature sensors; Viscosity;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.870589
  • Filename
    870589