Title :
New programming and erasing schemes for p-channel flash memory
Author :
Park, Jong T. ; Chun, Jeoung Y. ; Kim, Han K. ; Jang, Sung J. ; Yu, Chong G.
Author_Institution :
Dept. of Electron. Eng., Inchon Univ., South Korea
Abstract :
In this work, a new programming scheme using a forward substrate bias during BBHE injection and a two-step erasing scheme has been suggested to improve the performances of p-channel flash memory. It has been found that applying a forward substrate bias increases the electron injection efficiency and improves the cell´s endurance characteristics. The two-step erasing scheme, where a channel erase cycle is added after the source erase operation, is found to reduce the gate current degradation and also to improve the cell´s endurance characteristics.
Keywords :
flash memories; hot carriers; integrated circuit reliability; tunneling; BBHE injection; channel erase cycle; electron injection efficiency; endurance characteristics; forward substrate bias; gate current degradation; p-channel flash memory; programming schemes; source erase operation; two-step erasing scheme; Channel hot electron injection; Charge carrier processes; Degradation; Flash memory; Hot carriers; Nonvolatile memory; Scalability; Solids; Substrate hot electron injection; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
