Title :
GaN microwave electronics
Author :
Mishra, Umesh K. ; Wu, Yi-Feng ; Keller, Bernd P. ; Keller, Stacia ; DenBaars, Steven P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
In this paper, recent progress of AlGaN/GaN-based power high-electron-mobility transistors (HEMT´s) is reviewed. Remarkable improvement in performances was obtained through adoption of high Al contents in the AlGaN layer. The mobility in these modulation-doped structures is about 1200 cm2.V-1.s-1 at 300 K with sheet densities of over 1×1013 cm-2 . The current density is over 1 A/mm with gate-drain breakdown voltages up to 280 V. Ft values up to 52 GHz have been demonstrated. Continuous wave (CW) power densities greater than 3 W/mm at 18 GHz have been achieved
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; current density; electric breakdown; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device reliability; 18 GHz; 280 V; 300 K; AlGaN-GaN; CW power densities; current density; gate-drain breakdown voltages; microwave electronics; mobility; modulation-doped structures; power high-electron-mobility transistors; sheet densities; Aluminum gallium nitride; Consumer electronics; Costs; Crystalline materials; Gallium nitride; HEMTs; MESFETs; MODFETs; Microwave FETs; Microwave devices;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
