Title :
A novel FET model including an illumination intensity parameter for simulation of optically controlled millimeter-wave oscillators
Author :
Kawasaki, Shigeo ; Shiomi, Hidehisa ; Matsugatani, Kazuoki
Author_Institution :
Dept. of Commun. Eng., Tokai Univ., Kanagawa, Japan
fDate :
6/1/1998 12:00:00 AM
Abstract :
This paper demonstrates an illuminated FET model including an illumination-intensity parameter for simulation of optical characteristics of microwave and millimeter wave integrated circuits (MMIC´s). Modeling for an illuminated GaAs MESFET and an InP high electron-mobility transistor (HEMT), and analysis and experimental results from optically controlled microwave and millimeter-wave hybrid integrated circuit (HIC) and MMIC oscillators are discussed. The proposed illuminated FET model was able to explain the photoresponse of both the GaAs MESFET and the InP HEMT, and the photooperation of their circuits
Keywords :
MMIC oscillators; Schottky gate field effect transistors; equivalent circuits; field effect MIMIC; field effect MMIC; high electron mobility transistors; hybrid integrated circuits; integrated circuit modelling; microwave field effect transistors; microwave integrated circuits; millimetre wave field effect transistors; millimetre wave integrated circuits; photoconductivity; semiconductor device models; GaAs; GaAs MESFET; InP; InP HEMT; MMIC oscillators; high electron-mobility transistor; hybrid integrated circuit; illuminated FET model; illumination intensity parameter; microwave integrated circuits; millimeter wave integrated circuits; millimeter-wave oscillators; optical characteristics; optically controlled MM-wave oscillators; photoresponse; Gallium arsenide; HEMTs; Indium phosphide; Integrated circuit modeling; Integrated optics; Lighting; Microwave FETs; Millimeter wave integrated circuits; Millimeter wave transistors; Optical control;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
