Design consideration for the improved Class-D inverter topology

Author

Lee, Byoung-kuk ; Suh, Bum-Seok ; Hyun, Dong-seok

Author_Institution

Dept. of Electr. Eng., Hanyang Univ., Seoul, South Korea

Volume

45

Issue

2

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

217

Lastpage

227

Abstract

The characteristics and the superiority of the efficient snubber network for Class-D series resonant inverters are addressed in detail by comparison with conventional snubbers, i.e., the lossless capacitive snubber and the RC snubber, with respect to switching losses, overvoltage stresses, high-frequency resonant current stresses, and overall efficiency. Also, the optimal design scheme for it is considered and the analytical equations are derived in order to provide a straightforward and easy-to-design tool. The validity of the theoretical description is verified by testing on a 29-kHz MOSFET Class-D series resonant inverter rated at 1.2 kW

Keywords

MOSFET; invertors; overvoltage; resonant power convertors; snubbers; 1.2 kW; 29 kHz; Class-D inverter topology; Class-D series resonant inverters; MOSFET; RC snubber; high-frequency resonant current stresses; lossless capacitive snubber; overall efficiency; overvoltage stresses; snubber network; switching losses; Equations; MOSFET circuits; Network topology; Resonance; Resonant inverters; Snubbers; Stress; Switching loss; Testing; Voltage control;

fLanguage

English

Journal_Title

Industrial Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0278-0046

Type

jour

DOI

10.1109/41.681220

Filename

681220