Microwave noise characterization of two-port devices using an uncalibrated tuner

Author

Benelbar, R. ; Huyart, B. ; Bosisio, R.G.

Author_Institution

MPB Technol. Inc., Dorval, Que., Canada

Volume

44

Issue

10

fYear

1996

fDate

10/1/1996 12:00:00 AM

Firstpage

1725

Lastpage

1728

Abstract

A novel noise-parameter and S-parameter measurement system is proposed. Any device under test (DUT) can be characterized using the proposed setup. Such characterization is performed without any preset conditions on the input impedance of the noise-receiver and the repeatability of the impedance tuning mechanism. The DUT is used as a standard for tuner calibration. Measurements were carried out on a general purpose GaAs-MESFET. The extracted transistor noise-parameters are in good agreement with the manufacturer´s specified values over the operating frequency band (4-8 GHz)

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; electric noise measurement; gallium arsenide; microwave field effect transistors; microwave measurement; semiconductor device noise; 4 to 8 GHz; GaAs; III-V semiconductors; MESFET; S-parameter measurement system; device under test; impedance tuning mechanism; input impedance; microwave noise characterization; operating frequency band; repeatability; transistor noise-parameters; tuner calibration; two-port devices; uncalibrated tuner; Calibration; Frequency; Impedance; Manufacturing; Microwave devices; Noise measurement; Scattering parameters; Testing; Tuners; Tuning;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.538965

Filename

538965