• DocumentCode
    1386286
  • Title

    Experimental Evidence of Large Dispersion of Deposited Energy in Thin Active Layer Devices

  • Author

    Raine, Mélanie ; Gaillardin, Marc ; Paillet, Philippe ; Duhamel, Olivier ; Girard, Sylvain ; Bournel, Arnaud

  • Author_Institution
    DAM, CEA, Arpajon, France
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • Firstpage
    2664
  • Lastpage
    2672
  • Abstract
    Experimental data are reported, showing that heavy-ion induced deposited energy dispersion increases with decreasing sensitive layer thickness. Geant4 simulations provide insight into the mechanisms involved. Implications for device testing and radiation hardness assurance are discussed.
  • Keywords
    ion beam effects; radiation hardening (electronics); semiconductor device testing; semiconductor diodes; semiconductor process modelling; silicon-on-insulator; Geant4 simulations; device testing; heavy-ion induced deposited energy dispersion; radiation hardness assurance; sensitive layer thickness; thin active layer devices; CMOS technology; Diodes; Dispersion; Power MOSFET; Silicon on insulator technology; Deposited energy; SOI; diodes; heavy ion;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2172985
  • Filename
    6093872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1386286