Title :
Experimental Evidence of Large Dispersion of Deposited Energy in Thin Active Layer Devices
Author :
Raine, Mélanie ; Gaillardin, Marc ; Paillet, Philippe ; Duhamel, Olivier ; Girard, Sylvain ; Bournel, Arnaud
Author_Institution :
DAM, CEA, Arpajon, France
Abstract :
Experimental data are reported, showing that heavy-ion induced deposited energy dispersion increases with decreasing sensitive layer thickness. Geant4 simulations provide insight into the mechanisms involved. Implications for device testing and radiation hardness assurance are discussed.
Keywords :
ion beam effects; radiation hardening (electronics); semiconductor device testing; semiconductor diodes; semiconductor process modelling; silicon-on-insulator; Geant4 simulations; device testing; heavy-ion induced deposited energy dispersion; radiation hardness assurance; sensitive layer thickness; thin active layer devices; CMOS technology; Diodes; Dispersion; Power MOSFET; Silicon on insulator technology; Deposited energy; SOI; diodes; heavy ion;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2172985
