Title :
Effect of gamma ray irradiation on the conduction mechanisms of radio-frequency-sputtered Ta2O5 films
Author :
Wang, Ching-Wu ; Chen, Shih-Fang ; Lin, Ren-De
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
fDate :
8/1/2000 12:00:00 AM
Abstract :
The microstructural and electrical conduction properties of sputtered Ta2O5 films pre-irradiated and γ-ray-irradiated were systematically investigated. Analytical results revealed that the crystallinity and the leakage current of the pre-irradiated sample were effectively improved by raising the irradiation dose at low doses of irradiation [1 M~4 M rad(Ta2O5)]; however higher doses of γ-ray irradiation [>4 M rad(Ta2O5)] undesirably deteriorated the film crystallinity, yielding a larger leakage current. Such a result leads the Frenkel-Poole conduction (pre-irradiated sample) transformed to Schottky emission conduction process [low doses (1 M~4 M rad(Ta2O5)) of γ-ray-irradiated samples] and then gradually to the Frenkel-Poole conduction [high doses (>4 M rad(Ta2O5)) of γ-ray-irradiated samples] again
Keywords :
Poole-Frenkel effect; Schottky effect; crystal microstructure; gamma-ray effects; leakage currents; sputtered coatings; tantalum compounds; Frenkel-Poole conduction; RF sputtered films; Schottky emission conduction; Ta2O5; conduction mechanisms; film crystallinity; gamma ray irradiation effect; leakage current; microstructural properties; Conductive films; Crystal microstructure; Crystallization; Dielectric devices; Dielectric films; Dielectric materials; Leakage current; Mechanical factors; Radio frequency; Semiconductor films;
Journal_Title :
Nuclear Science, IEEE Transactions on
