Photovoltaic-FET for optoelectronic RF/μwave switching

Author

Sun, C.K. ; Nguyen, R. ; Chang, C.T. ; Albares, D.J.

Author_Institution

RDT&E Div., NCCOSC, San Diego, CA, USA

Volume

44

Issue

10

fYear

1996

fDate

10/1/1996 12:00:00 AM

Firstpage

1747

Lastpage

1750

Abstract

A photovoltaic-FET (PV-FET) is demonstrated for RF/μwave switching with performance improved over other optoelectronic switches reported while operating with 10-100 times less optical power. The PV-FET characteristics were 3 Ω on-resistance, >30 MΩ off-resistance under <1 mW optical power, and 300 fF switch capacitance. This PV-FET was inductor tuned at 790 MHz and 7.4 GHz to enhance isolation, intended for reconfigurable antenna applications. The measured insertion loss and isolation agree well with those from theoretical calculation and numerical circuit simulation based on the switch parameters. The measured switch rise and fall times were 20 μs and 2 μs, respectively. Controlled by light via optical fiber, the PV-FET can be used for remote RF/μwave switching control with no electrical bias, complete electromagnetic, and good thermal isolation

Keywords

antenna accessories; field effect transistor switches; microwave field effect transistors; phototransistors; 2 mus; 20 mus; 3 ohm; 300 fF; 7.4 GHz; 790 MHz; inductor tuning; insertion loss; isolation; off-resistance; on-resistance; optical power; optoelectronic RF/microwave switching; photovoltaic-FET; reconfigurable antenna applications; switch capacitance; switch fall time; switch rise time; Antenna measurements; Capacitance; Inductors; Lighting control; Loss measurement; Optical control; Optical switches; Photovoltaic systems; Radio frequency; Solar power generation;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.538971

Filename

538971