Die Bonding for a Nitride Light-Emitting Diode by Low-Temperature Sintering of Micrometer Size Silver Particles

Author

Kuramoto, Masafumi ; Ogawa, Satoru ; Niwa, Miki ; Kim, Keun-Soo ; Suganuma, Katsuaki

Author_Institution

LED Production Div., Nichia Corp., Anan, Japan

Volume

33

Issue

4

fYear

2010

Firstpage

801

Lastpage

808

Abstract

Die-bonding for a nitride light-emitting diode (LED) by sintering of micrometer size Ag particles in air at 200°C was investigated. Micrometer size Ag particles absorb oxygen remarkably well at 200°C and above, and on sintering, they form a porous layer. The activating temperature of the sintering is in good agreement with the oxygen adsorption temperature. Sintering does not progress in the absence of oxygen. A reduction of thermal resistance and an improvement of reliability are achieved by the sintered layer as a die attach to a surface-mount-type LED. This mounting method is useful in the die bonding of electronic components, and is an alternative technique to high-temperature lead soldering.

Keywords

light emitting diodes; microassembling; silver; sintering; surface mount technology; Ag; die bonding; low temperature sintering; nitride light emitting diode; porous layer; surface mount type LED; temperature 200 C; thermal resistance; Bonding; Heating; Light emitting diodes; Microassembly; Resins; Silver; Thermal resistance; Bonding; conducting materials; light-emitting diodes; mass spectroscopy; oxygen packaging; reliability;

fLanguage

English

Journal_Title

Components and Packaging Technologies, IEEE Transactions on

Publisher

ieee

ISSN

1521-3331

Type

jour

DOI

10.1109/TCAPT.2010.2064313

Filename

5643123