Effect of substrate illumination on the characteristics of an ion implanted GaAs OPFET

Author

Roy, N.S. ; Pal, B.B. ; Khan, R.U.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

147

Issue

4

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

237

Lastpage

243

Abstract

An analytical model of an ion-implanted GaAs MESFET has been developed considering the illumination from the substrate. The ion-implanted profile of the channel region is represented by Pearson IV distribution. Modulation of the channel opening due to the internal photovoltage has been considered. The I-V characteristics, the photocurrent, the internal photovoltage and the transconductance of the device have been calculated and discussed. The substrate doping concentration is found to affect the overall drain-source current under illumination, which indicates a significant substrate effect on the device characteristics. The illumination also enhances the current of the MESFET compared to that in the dark. The I-V characteristics, transfer characteristics and the ratio of drain currents under illumination and in the dark have been plotted and discussed

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; ion implantation; photoconducting devices; substrates; GaAs; I-V characteristics; Pearson IV distribution; analytical model; device characteristics; drain currents; internal photovoltage; ion implanted GaAs OPFET; ion-implanted GaAs MESFET; ion-implanted profile; overall drain-source current; photocurrent; substrate; substrate doping concentration; substrate illumination; transconductance; transfer characteristics;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20000387

Filename

871121