Title :
Monolithic super-bright red resonant cavity light-emitting diode grown by solid source molecular beam epitaxy
Author :
Jalonen, M. ; Kongas, J. ; Toivonen, M. ; Savolainen, P. ; Salokatve, A. ; Pessa, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
7/1/1998 12:00:00 AM
Abstract :
Monolithic super-bright resonant-cavity light-emitting diode operating at /spl lambda/=663 nm has been developed. The diode consisted of a 1/spl lambda/-thick AlGaInP active region sandwiched between AlAs-AlGaAs distributed Bragg reflectors. The device structure was grown by solid source molecular beam epitaxy. The current aperture of the emitter was created by lateral selective wet thermal oxidation. A record-high peak wall-plug efficiency of 2.2% and a continuous-wave output power of 1.4 mW were attained without heatsinking at room temperature from a diode having a diameter of 80 μm. The emission linewidth was as narrow as 4.5 nm.
Keywords :
III-V semiconductors; aluminium compounds; brightness; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; optical resonators; semiconductor growth; semiconductor quantum wells; 1.4 mW; 2.2 percent; 663 nm; 80 mum; AlAs-AlGaAs; AlAs-AlGaAs distributed Bragg reflectors; AlGaInP; AlGaInP active region; LED; continuous-wave output power; diameter; emission linewidth; lateral selective wet thermal oxidation; monolithic super-bright red resonant cavity light-emitting diode; record-high peak wall-plug efficiency; room temperature; solid source molecular beam epitaxy; super-bright resonant-cavity light-emitting diode; Light emitting diodes; Mirrors; Molecular beam epitaxial growth; Optical fiber communication; Optical resonators; Resonance; Solids; Stimulated emission; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
