1.52-1.59-μm range different-wavelength modulator-integrated DFB-LDs fabricated on a single wafer

Author

Kudo, K. ; Ishizaka, M. ; Sasaki, T. ; Yamazaki, H. ; Yamaguchi, M.

Author_Institution

Optoelectron. & High-Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan

Volume

10

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

929

Lastpage

931

Abstract

We report for the first time different-wavelength modulator-integrated distributed-feedback laser diodes (DFB/MODs) fabricated on a single wafer, whose lasing wavelength cover almost all of the expanded erbium-doped fiber amplifier (EDFA) gain band from 1.527 to 1.593 μm. The devices provided uniform and high-performance characteristics such as a threshold current less than 12 mA and successful transmission of 2.5 Gb/s-600 km through a normal fiber.

Keywords

distributed feedback lasers; electro-optical modulation; integrated optoelectronics; optical communication equipment; optical fabrication; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.527 to 1.593 mum; 12 mA; 2.5 Gbit/s; 600 km; different-wavelength modulator-integrated DFB-LDs; expanded Er-doped fiber amplifier gain band; high-performance characteristics; lasing wavelength; normal fiber; optical communications equipment; optical fibre communication; single wafer; threshold current; Absorption; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Optical fiber communication; Photonic band gap; Quantum well devices; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.681273

Filename

681273