GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 μm with 0.6-W diffraction-limited power

Author

Choi, H.K. ; Walpole, J.N. ; Turner, G.W. ; Conners, M.K. ; Missaggia, L.J. ; Manfra, M.J.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

10

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

938

Lastpage

940

Abstract

Tapered lasers fabricated from a GaInAsSb-AlGaAsSb single-quantum-well structure are reported. The laser structure, grown by molecular beam epitaxy, has broad-stripe pulsed threshold current densities as low as 50 A/cm/sup 2/ at room temperature. Tapered lasers have exhibited diffraction-limited continuous-wave output power up to 600 mW.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; light diffraction; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; 0.6 W; 2.05 mum; 600 mW; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb single-quantum-well structure; GaInAsSb-AlGaAsSb tapered lasers; broad-stripe pulsed threshold current densities; diffraction-limited continuous-wave output power; diffraction-limited power; laser structure; molecular beam epitaxy; quantum well lasers; room temperature; Apertures; Diffraction; Gas lasers; Molecular beam epitaxial growth; Power generation; Power lasers; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.681276

Filename

681276