Enhancement in electroabsorption waveguide modulator slope efficiency at high optical power

Author

Welstand, R.B. ; Pappert, S.A. ; Nichols, D.T. ; Lembo, L.J. ; Liu, Y.Z. ; Yu, P.K.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

10

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

961

Lastpage

963

Abstract

An increase in transfer curve slope efficiency for a Franz-Keldysh effect InGaAsP-InP electroabsorption waveguide modulator is observed as the incident optical power is increased from 5.8 to 17 dBm. However, high-frequency RF measurements agree with the gain predicted from the low-power transfer curve at all optical powers. We attribute the increase in dc slope efficiency to a temperature-induced bandgap shrinkage of the electroabsorption material.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical waveguides; Franz-Keldysh effect; InGaAsP-InP; InGaAsP-InP electroabsorption waveguide modulator; dc slope efficiency; electroabsorption material; electroabsorption waveguide modulator slope efficiency; high optical power; high-frequency RF measurements; incident optical power; low-power transfer curve; optical communications equipment; optical powers; temperature-induced bandgap shrinkage; transfer curve slope efficiency; Absorption; Electrooptic modulators; Optical interferometry; Optical modulation; Optical noise; Optical waveguides; Radio frequency; Space technology; Transmitting antennas; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.681284

Filename

681284