High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector

Author

Chiu, Yi-Jen ; Fleischer, Siegfried B. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

10

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1012

Lastpage

1014

Abstract

We report a novel type of p-i-n traveling-wave photodetector utilizing low-temperature-grown GaAs (LTG-GaAs). The devices show a record impulse response time (530-fs fullwidth at half-maximum, /spl sim/560 GHz -3-dB bandwidth) which agrees with theoretical estimates. The effects of various limiting factors on the device performance were analyzed theoretically and compared with measurements obtained by electrooptic characterization of our devices. Calculations indicate that the device speed is dominated by the short carrier lifetime. DC external quantum efficiencies as high as 8% were obtained.

Keywords

III-V semiconductors; carrier lifetime; electro-optical effects; gallium arsenide; high-speed optical techniques; p-i-n photodiodes; photodetectors; transient response; 530 fs; 560 GHz; 8 percent; DC external quantum efficiencies; GaAs; device performance; device speed; electrooptic characterization; fs fullwidth at half-maximum; high-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector; impulse response time; limiting factors; low-temperature-grown GaAs; p-i-n traveling-wave photodetector; short carrier lifetime; Bandwidth; Capacitance; Charge carrier lifetime; Delay; Electrooptic devices; Gallium arsenide; III-V semiconductor materials; Optical pulses; PIN photodiodes; Photodetectors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.681301

Filename

681301