Title :
188 GHz doped-channel In0.8Ga0.2P/In0.53 Ga0.47As/InP HFETs
Author :
Tang, Z. ; Hsia, H. ; Kuo, H.C. ; Caruth, D. ; Stillman, G.E. ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
9/14/2000 12:00:00 AM
Abstract :
The authors have fabricated 0.14 μm T-gate, doped-channel In 0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with fT=188 GHz and fmax=225 GHz at Vds=1.5 V. These are state-of-the-art results for doped-channel HFETs and are comparable to the best reported performance of InP p-HEMTs with similar gate length
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; junction gate field effect transistors; 0.14 mum; 188 GHz; In0.8Ga0.2P-In0.53Ga0.47 As-InP; RF performance; T-gate devices; current density; doped-channel HFET; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001170
