DocumentCode
1386928
Title
The importance of the non-quasi-static bipolar transistor model for circuit applications
Author
Chen, Meng-Kai
Author_Institution
Delco Electron. Corp., Kokomo, IN, USA
Volume
26
Issue
2
fYear
1991
fDate
2/1/1991 12:00:00 AM
Firstpage
153
Lastpage
160
Abstract
The need for non-quasi-static bipolar models is examined from a practical viewpoint in order to optimize compensation capacitor value, improve performance, and reduce chip area. This need depends on the circuit under study. The utility of non-quasi-static equivalent circuits in small-signal applications is investigated. The circuit example studied is a lateral p-n-p transistor used as a series pass transistor in a series voltage regulator. For the series voltage regulator, the non-quasi-static inductance model correctly predicts the rapid falloff of the magnitude of the current gain and thus reduces the required internal compensation and subsequent circuit area
Keywords
bipolar transistors; equivalent circuits; semiconductor device models; bipolar transistor model; chip area reduction; circuit applications; compensation capacitor value; current gain; lateral p-n-p transistor; non-quasi-static equivalent circuits; non-quasi-static inductance model; nonquasistatic model; series pass transistor; series voltage regulator; small-signal applications; Bipolar transistors; Charge carrier processes; Circuit simulation; Delay; Frequency; Inductance; Microwave transistors; Predictive models; Regulators; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.68132
Filename
68132
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