• DocumentCode
    1386949
  • Title

    Extraction and modeling methods for FET devices

  • Author

    Follmann, R. ; Borkes, J. ; Waldow, P. ; Wolff, I.

  • Author_Institution
    IMST GmbH, Kamp-Lintfort, Germany
  • Volume
    1
  • Issue
    3
  • fYear
    2000
  • fDate
    9/1/2000 12:00:00 AM
  • Firstpage
    49
  • Lastpage
    55
  • Abstract
    The proposed method is based on spline functions, takes into account thermal and noise effects, allows a scaling of different FET device geometries, and is available in commercial CAD software like Agilents Series IV or ADS
  • Keywords
    electronic design automation; equivalent circuits; field effect transistors; semiconductor device models; semiconductor device noise; splines (mathematics); ADS; Agilents Series IV; CAD software; FET device geometries; modeling methods; noise effects; spline functions; thermal effects; Capacitance; Circuit simulation; Differential equations; Equivalent circuits; FETs; Frequency; Geometry; Scattering parameters; Semiconductor process modeling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microwave Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1527-3342
  • Type

    jour

  • DOI
    10.1109/6668.871187
  • Filename
    871187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1386949