Title :
Experimental and analytical properties of 0.2 micron wide, multi-layer, GMR, memory elements
Author :
Pohm, A.V. ; Beech, R.S. ; Daughton, J.M. ; Everitt, B.A. ; Chen, E.Y. ; Durlam, M. ; Nordquist, K. ; Zhu, T. ; Tehrani, S.
Author_Institution :
Nonvolatile Electron., Eden Prairie, MN, USA
fDate :
9/1/1996 12:00:00 AM
Abstract :
Memory elements 0.2 microns wide made from multilayer GMR material have been studied experimentally and analytically. When etched into narrow elements, the 12 to 15% material exhibits a memory mode with large outputs of ±8%. Analysis shows that the mode is suitable for multi-megabit die with high performance if yield can be achieved
Keywords :
giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetoresistive devices; 0.2 micron; multi-layer GMR memory element; multi-megabit die; yield; Cobalt; Colossal magnetoresistance; Copper alloys; Couplings; Giant magnetoresistance; Hydrogen; Magnetic analysis; Magnetic materials; Magnetic separation; Saturation magnetization;
Journal_Title :
Magnetics, IEEE Transactions on
