Fabrication and characterization of Co(11¯00)/Mo(211) and Co(112¯0)/Mo(100) bilayered films on MgO

Author

Yao, Y.D. ; Liou, Y. ; Huang, J.C.A. ; Liao, S.Y. ; Klik, I. ; Chang, C.P. ; Lo, C.K.

Author_Institution

Inst. of Phys., Acad. Sinica, Taipei, Taiwan

Volume

32

Issue

5

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

4669

Lastpage

4671

Abstract

Co/Mo bilayered films have been successfully grown on MgO(100) and MgO(110) substrates by molecular beam epitaxy. According to the reflection high energy electron diffraction and X-ray diffraction measurements the crystal structure of the film depends on the orientation of the buffer and substrate. The growth of biaxial Co(112¯0)/Mo(100) on MgO(100) and of uniaxial Co(11¯00)/Mo(211) on MgO(110) substrates has been confirmed. The anisotropic magnetoresistance (AMR) is strongly influenced by the Co orientation which is altered by growth on Mo/MgO(100) and MgO(110). In Co(112¯0)/Mo(100) on MgO(110) AMR is isotropic for all in-plane fields. However, for Co(11¯00)/Mo(211) on MgO(110) we observed enhancement of AMR along the easy axis at 10 K

Keywords

X-ray diffraction; cobalt; magnetic epitaxial layers; magnetic multilayers; magnetoresistance; metallic epitaxial layers; metallic superlattices; molecular beam epitaxial growth; molybdenum; reflection high energy electron diffraction; Co orientation; Co(11¯00)/Mo(211); Co(112¯0)/Mo(100); Co-Mo; MgO; MgO substrate; X-ray diffraction; anisotropic magnetoresistance; bilayered films; buffer orientation; characterization; crystal structure; fabrication; in-plane fields; molecular beam epitaxy; reflection high energy electron diffraction; Buffer layers; Chemical elements; Electron beams; Fabrication; Magnetic field measurement; Molecular beam epitaxial growth; Substrates; Temperature; X-ray diffraction; X-ray scattering;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.539113

Filename

539113