Title :
Effects of Ni81Fe19 underlayer and Ar ion bombardment to deposition of (111) oriented Fe50Mn50 layers for spin valve devices
Author :
Miyamoto, Yasuyoshi ; Yoshitani, Tohru ; Nakagawa, Shigeki ; Naoe, Masahiko
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
9/1/1996 12:00:00 AM
Abstract :
[Ni81Fe19/Cu/Ni81Fe19 /Fe50Mn50] multilayers for Spin Valve devices were deposited by dual ion beam sputtering method. Antiferromagnetic FeMn layers in Spin Valve devices require the well (111) orientations of crystallites in order to attain proper exchange-bias field. In this study, validity of Ni-Fe underlayers were investigated to enhance (111) orientation of crystallites in FeMn layers. The moderate ion bombardment to the growing Ni-Fe underlayer seemed to promote the growth of (111) oriented FeMn crystallites. The adoption of these Ni-Fe/FeMn bilayers as antiferromagnetic layers in Spin Valve devices was useful to attain preferably high exchange-bias field and field sensitivity
Keywords :
antiferromagnetic materials; copper; exchange interactions (electron); ferromagnetic materials; ion beam effects; iron alloys; magnetic multilayers; manganese alloys; nickel alloys; sputtered coatings; Ar ion bombardment; Fe50Mn50 layers; Ni81Fe19 underlayer; Ni81Fe19-Cu-Fe50Mn50; Ni81Fe19/Cu/Ni81Fe19 /Fe50Mn50 multilayers; antiferromagnetic FeMn layers; dual ion beam sputtering method; enhance (111) orientation; field sensitivity; r exchange-bias field; spin valve devices; Antiferromagnetic materials; Atomic layer deposition; Crystallization; Iron; Magnetic field measurement; Magnetic multilayers; Nonhomogeneous media; Spin valves; Substrates; X-ray scattering;
Journal_Title :
Magnetics, IEEE Transactions on
