DocumentCode
1387180
Title
Effects of Ni81Fe19 underlayer and Ar ion bombardment to deposition of (111) oriented Fe50Mn50 layers for spin valve devices
Author
Miyamoto, Yasuyoshi ; Yoshitani, Tohru ; Nakagawa, Shigeki ; Naoe, Masahiko
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume
32
Issue
5
fYear
1996
fDate
9/1/1996 12:00:00 AM
Firstpage
4672
Lastpage
4674
Abstract
[Ni81Fe19/Cu/Ni81Fe19 /Fe50Mn50] multilayers for Spin Valve devices were deposited by dual ion beam sputtering method. Antiferromagnetic FeMn layers in Spin Valve devices require the well (111) orientations of crystallites in order to attain proper exchange-bias field. In this study, validity of Ni-Fe underlayers were investigated to enhance (111) orientation of crystallites in FeMn layers. The moderate ion bombardment to the growing Ni-Fe underlayer seemed to promote the growth of (111) oriented FeMn crystallites. The adoption of these Ni-Fe/FeMn bilayers as antiferromagnetic layers in Spin Valve devices was useful to attain preferably high exchange-bias field and field sensitivity
Keywords
antiferromagnetic materials; copper; exchange interactions (electron); ferromagnetic materials; ion beam effects; iron alloys; magnetic multilayers; manganese alloys; nickel alloys; sputtered coatings; Ar ion bombardment; Fe50Mn50 layers; Ni81Fe19 underlayer; Ni81Fe19-Cu-Fe50Mn50; Ni81Fe19/Cu/Ni81Fe19 /Fe50Mn50 multilayers; antiferromagnetic FeMn layers; dual ion beam sputtering method; enhance (111) orientation; field sensitivity; r exchange-bias field; spin valve devices; Antiferromagnetic materials; Atomic layer deposition; Crystallization; Iron; Magnetic field measurement; Magnetic multilayers; Nonhomogeneous media; Spin valves; Substrates; X-ray scattering;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.539114
Filename
539114
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