Spin dependent tunneling devices fabricated using photolithography

Author

Beech, Russell S. ; Anderson, John ; Daughton, Jim ; Everitt, Brenda A. ; Wang, Dexin

Author_Institution

Nonvolatile Electron. Inc., Eden Prairie, MN, USA

Volume

32

Issue

5

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

4713

Lastpage

4715

Abstract

Spin dependent tunneling (SDT) devices have been fabricated using standard photolithographic techniques. The SDT film was RF sputtered NiFeCo(125 Å)/Al₂O₃(20 Å)/CoFe. Device resistances ranged from 1 KΩ to 12.9 KΩ for device areas of 1000 μm² (10 μm X 100 μm) to 84.5 μm² (6.5 μm X 13 μm), respectively. Peak GMR was over 4% at low bias with saturation fields around 10 Oe. Hard layer switching fields were about 50 Oe. Memory operation was demonstrated using integrated metallization for supplying read/write fields

Keywords

MIM devices; alumina; cobalt alloys; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic film stores; magnetic sensors; magnetic switching; magnetic thin film devices; magnetoresistive devices; metallisation; nickel alloys; photolithography; sputtered coatings; tunnelling; 1 to 12.9 kohm; 10 mum; 100 mum; 125 A; 13 mum; 20 A; 6.5 mum; NiFeCo-Al₂O₃-CoFe; RF sputtered NiFeCo/Al₂O₃/CoFe; SDT film; device resistances; hard layer switching fields; integrated metallization; low bias; magnetic field sensors; memory operation; peak GMR; photolithographic techniques; photolithography; read/write fields; saturation fields; spin dependent tunneling devices; Giant magnetoresistance; Insulation; Lithography; Magnetic films; Magnetic materials; Magnetic separation; Magnetostatics; Radio frequency; Sputtering; Tunneling;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.539127

Filename

539127