A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications

Author

Tan, Yue ; Kumar, Mahender ; Sin, Johnny K O ; Shi, Longxing ; Lau, Jack

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. Technol., Hong Kong

Volume

35

Issue

10

fYear

2000

Firstpage

1481

Lastpage

1486

Abstract

This paper presents a silicon-on-insulator (SOI) fully integrated RF power amplifier for single-chip wireless transceiver applications. The integrated power amplifier (IPA) operates at 900 MHz, and is designed and fabricated using a 1.5-/spl mu/m SOI LDMOS/CMOS/BJT technology. This technology is suitable for the complete integration of the front-end circuits with the baseband circuits for low-cost low-power high-volume production of single-chip transceivers. The IPA is a two-stage Class E power amplifier. It is fabricated along with the on-chip input and output matching networks. Thus, no external components are needed. At 900 MHz and with a 5-V supply, the power amplifier delivers 23-dBm output power to a 50-/spl Omega/ load with 16-dB gain and 49% power-added efficiency.

Keywords

BIMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; impedance matching; silicon-on-insulator; transceivers; 1.5 micron; 16 dB; 49 percent; 5 V; 900 MHz; LDMOS/CMOS/BJT technology; RF power amplifier; Si; baseband circuits; front-end circuits; fully integrated SOI power amplifier; high-volume production; on-chip input matching networks; output matching networks; power-added efficiency; single-chip transceivers; single-chip wireless transceiver applications; two-stage Class E power amplifier; Baseband; CMOS technology; Integrated circuit technology; Network-on-a-chip; Power amplifiers; Production; Radio frequency; Radiofrequency amplifiers; Silicon on insulator technology; Transceivers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.871326

Filename

871326