DocumentCode :
1387663
Title :
AC Susceptibility Studies of Anisotropy in Sm-123 Superconductors
Author :
Sakamoto, Nobuyoshi ; Akune, Tadahiro
Author_Institution :
Dept. of the Electr. Eng. & Inf. Technol., Kyushu Sangyo Univ., Fukuoka, Japan
Volume :
21
Issue :
3
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
3142
Lastpage :
3145
Abstract :
The main cause of the degradation in the oxide superconductors is considered to originate in the inter-granular link region among the superconducting grains. For analytical study of the granular structure, the grained Bean model is proposed, where the superconducting grains are immersed in the interconnecting link superconductors. Difference of the superconducting characteristics of the grain and the link, pinning penetration depths Bpg, Bpl and grain volume factor fg, introduces a variety of deformation on the AC susceptibility curves, such as double peaks in the imaginary part χ´´ and plateaus in the real part χ´. From the dependence of χ´ and χ´´ of AC susceptibility on temperatures T and DC magnetic fields Bdc in grain-aligned Sm-123 superconductors, critical current densities, grain sizes and their anisotropic nature can be estimated and discussed comparing with the existing data.
Keywords :
Bean model; critical current density (superconductivity); flux pinning; grain size; high-temperature superconductors; samarium compounds; AC susceptibility; anisotropy; critical current density; grain size; grain volume factor; grained Bean model; granular structure; interconnecting link superconductor; oxide superconductor; pinning penetration depth; superconducting grain; susceptibility curve; Bean model; Granular superconductors; Magnetic resonance imaging; Magnetic susceptibility; Magnetization; Superconducting magnets; AC susceptibility; grained Bean model; pinning penetration field;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2010.2089670
Filename :
5643960
Link To Document :
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