Characterization of the Seed Layer Modified ${\rm La}_{2}{\rm Zr}_{2}{\rm O}_{7}$ Buffer Layer Coated on Cube Textured Ni5%W Substrate

This paper focused on the modification properties of the La₂Zr₂O₇ (LZO) seed layers for the epitaxial growth of thick LZO buffer films on cube-textured Ni5%W (Ni5W) substrate by the metal organic deposition (MOD) method. The surface morphologies of the LZO seed layers with different precursor concentrations were described by SEM. The grain orientation and the crystallographic growth model of the LZO seed layer were characterized by the electron backscatter diffraction (EBSD). The XRD analyses reveal that the LZO buffer layers on the Ni5W substrates with and without seed layers were grown epitaxially. However, the uniformly distributed islanded LZO seed layers with highly (001)[110] rotated cube texture not only can improve the crystallinity of the subsequent LZO buffer films, but also can optimize the in-plan and out-plan orientations of the thick LZO buffer layers.