Semiconductor circular ring lasers fabricated with the cryo-etching technique

Author

Tsai, Chia-Ho ; Lee, Jiun-Haw ; Chiang, Hsin-Jiun ; Yang, C.C. ; Shih, M.C. ; Chen, B.C. ; Chuang, T.J. ; Chang, Yih

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

10

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

751

Lastpage

753

Abstract

GaAs-AlGaAs multiple quantum well semiconductor circular ring lasers with a /spl sigma/ shape were fabricated by using the deep UV laser-assisted cryo-etching technique. Most of the fabricated lasers had external quantum efficiencies of more than 18% which mere higher than similar devices previously reported. The modal spacing observed from the resonance spectrum near threshold was always several times that corresponding to the circular oscillation of the ring cavity. The observed modal spacing was quite consistent with the theoretical result based on a coupled-cavity model.

Keywords

III-V semiconductors; aluminium compounds; cryogenics; etching; gallium arsenide; laser cavity resonators; laser modes; optical fabrication; quantum well lasers; ring lasers; /spl sigma/ shape; 18 percent; GaAs-AlGaAs; GaAs-AlGaAs multiple quantum well semiconductor circular ring lasers; circular oscillation; coupled-cavity model; cryo-etching technique; deep UV laser-assisted cryo-etching technique; external quantum efficiencies; modal spacing; near threshold; resonance spectrum; ring cavity; semiconductor circular ring laser fabrication; Etching; Laser modes; Laser theory; Optical device fabrication; Optical waveguides; Quantum well lasers; Ring lasers; Semiconductor lasers; Shape; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.681468

Filename

681468