Limits of the modulation response of a single-mode proton implanted VCSEL

Author

Satuby, Yinon ; Orenstein, Meir

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

10

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

760

Lastpage

762

Abstract

The limitations of the direct modulation bandwidth for proton implanted vertical-cavity lasers were explored. The measured damping factor of an optimized device, implies a possible bandwidth of up to 80 GHz. However, the intrinsic (parasitic free) carrier transport/capture time of /spl sim/15 ps limits substantially the actual frequency response. The actual measured bandwidth$14.5 GHz was limited also by the emerging of higher lasing modes. The combined effects of shape, size and implantation dose should be optimized to reach the limit of the direct modulation of these lasers.

Keywords

carrier mobility; electro-optical modulation; frequency response; ion implantation; laser cavity resonators; laser modes; semiconductor lasers; surface emitting lasers; 15 ps; 80 GHz; actual frequency response; damping factor; direct modulation; direct modulation bandwidth; electro optical modulation; higher lasing modes; implantation dose; measured bandwidth; modulation response; optimisation; optimized device; parasitic free capture time; parasitic free carrier transport; proton implanted vertical-cavity lasers; single-mode proton implanted VCSEL; Bandwidth; Damping; Frequency response; Laser modes; Protons; Resonance; Resonant frequency; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.681474

Filename

681474