Title :
1.55-μm InGaAsP-InP spot-size-converted (SSC) laser with simple technological process
Author :
Fang, R.Y. ; Bertone, D. ; Meliga, M. ; Magnetti, G. ; Morello, G. ; Murgia, S. ; Oliveti, G. ; Paoletti, R. ; Rossi, G.
Author_Institution :
CSELT, Torino, Italy
fDate :
6/1/1998 12:00:00 AM
Abstract :
We report the realization of a 1.55-μm spot-size-converted (SSC) laser using conventional SCH-MQW active layers and conventional photolithography. The laser consists of a 300-μm-long rectangular gain section, with compensated multiple-quantum-well (MQW) structure, and a 300-μm-long tapered passive waveguide, fabricated on lower SCH layer. The device exhibits a beam divergence of 13/spl deg/×18/spl deg/ and 3.5-dB coupling loss with a cleaved single-mode fiber (SMF). The 1-dB alignment tolerance is /spl plusmn/2.3 μm in the vertical direction and /spl plusmn/1.9 μm in the lateral direction, respectively.
Keywords :
gallium arsenide; gallium compounds; indium compounds; infrared sources; laser beams; laser transitions; optical fabrication; optical fibre couplers; optical losses; optical transmitters; photolithography; quantum well lasers; 1.55 mum; 3.5 dB; 300 mum; InGaAsP-InP; InGaAsP-InP spot-size-converted MQW laser; SCH-MQW active layers; alignment tolerance; beam divergence; cleaved single-mode fiber coupling; compensated multiple-quantum-well structure; conventional photolithography; coupling loss; lateral direction; lower SCH layer; optical transmitters; rectangular gain section; simple technological process; tapered passive waveguide; vertical direction; Fiber lasers; Lithography; Optical coupling; Optical fiber couplers; Optical fibers; Optical waveguides; Quantum well devices; Rectangular waveguides; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE