Temperature dependence of the threshold current in 1.55-μm strain-compensated multiquantum-well distributed-feedback lasers

Author

Bhattacharya, Pallab ; Yuan, Y. ; Brock, T. ; Caneau, C. ; Bhat, R.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

10

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

778

Lastpage

780

Abstract

The temperature dependent threshold current and spectral output characteristics of InP-based 1.55-μm distributed-feedback (DFB) ridge InGaAsP MQW lasers made by metal-organic vapor phase epitaxial growth and regrowth, electron-beam lithography and grating formation, and reactive ion etching (RIE) have been characterized. Single-mode operation and T₀ as high as 120 K at room temperature and below are measured. The high value of T₀ is predominantly attributed to the tunnel injection design incorporated in the active region.

Keywords

III-V semiconductors; distributed feedback lasers; electron beam lithography; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; quantum well lasers; semiconductor growth; sputter etching; tunnelling; vapour phase epitaxial growth; 1.55 mum; 120 K; DFB ridge InGaAsP MQW lasers; InGaAsP; InP; active region; distributed-feedback; electron-beam lithography; grating formation; metal-organic vapor phase epitaxial growth; reactive ion etching; room temperature; single-mode operation; spectral output characteristics; strain-compensated multiquantum-well distributed-feedback lasers; temperature dependence; temperature dependent threshold current; threshold current; tunnel injection design; Distributed feedback devices; Epitaxial growth; Fiber lasers; Laser tuning; Surface emitting lasers; Temperature dependence; Threshold current; Tunneling; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.681481

Filename

681481