مرکز منطقه ای اطلاع رساني علوم و فناوري - Gate-Geometric Recessed Nanoscale <formula formulatype="inline"> <img src="/images/tex/20230.gif" alt="\\hbox {In}_{0.52} \\hbox {Al}_{0.48}\\hbox {As}"> </formula>–<formula formulatype="inline"> <img src="/images/tex/19960.gif" alt="\\hbox {In}

Title :

Gate-Geometric Recessed Nanoscale $\\hbox {In}_{0.52} \\hbox {Al}_{0.48}\\hbox {As}$ – $\\hbox {In}_{0</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Rathi, Servin ; Gupta, R.S. ; Gupta, Mridula</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electron. Sci., Univ. of Delhi South Campus, New Delhi, India</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>12</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2012</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3/1/2012 12:00:00 AM</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>139</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>145</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>In this paper, a generalized analysis of recessed double-gate high-electron-mobility transistor for different gate geometries (T-gate, IL-gate, Γ-gate, etc.) to realize higher breakdown is carried out. The effect of gate geometries on breakdown voltage is studied through potential and electric field profile. The drain current, transconductance, intrinsic gain, capacitances, and RF performances are also studied. The analysis shows that the incorporation of these geometries not only leads to higher breakdown but also enhances the transcapacitance of the devices, which affect the device RF performance.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device breakdown; In<sub>0.52</sub>Al<sub>0.48</sub>As-In<sub>0.53</sub>Ga<sub>0.47</sub>As; RF performances; breakdown voltage; capacitances; device transcapacitance; drain current; electric field profile; gate-geometric-recessed nanoscale double-gate HEMT; high-electron mobility transistor; intrinsic gain; potential field profile; transconductance; Electric breakdown; Electric fields; Geometry; HEMTs; Indium gallium arsenide; Logic gates; Transconductance; <formula formulatype=$ $Gamma$-gate; IL-gate; RF performance; Recessed double-gate high-electron-mobility transistor (HEMT) (DGHEMT); T-gate; drain current; electric field; gate-geometries; recessed; transcapacitance;