DocumentCode
1388087
Title
Spin tunneling random access memory (STram)
Author
Wang, Zhigang ; Nakamura, Yoshihisa
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Volume
32
Issue
5
fYear
1996
fDate
9/1/1996 12:00:00 AM
Firstpage
4022
Lastpage
4024
Abstract
A storage mechanism in ferromagnetic-insulator-ferromagnetic spin-polarized tunneling junctions has been found by us. Based on this mechanism, we designed and fabricated a 2×2 bit Spin Tunneling Random Access Memory (STram). These junctions provide an excellent means of storing a binary data in the hard components, and sensing its remanent state by switching the soft component in such a way that the magnetic state of the hard component remains unaltered
Keywords
giant magnetoresistance; magnetic film stores; magnetoresistive devices; random-access storage; tunnelling; GMR; STram; binary data storage; ferromagnetic-insulator-ferromagnetic spin-polarized tunneling junction; magnetic switching; remanent state; spin tunneling random access memory; Chromium; Electrical resistance measurement; Giant magnetoresistance; Insulation; Magnetic multilayers; Magnetic tunneling; Optical device fabrication; Random access memory; Resists; Sputter etching;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.539250
Filename
539250
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