Title :
Spin tunneling random access memory (STram)
Author :
Wang, Zhigang ; Nakamura, Yoshihisa
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fDate :
9/1/1996 12:00:00 AM
Abstract :
A storage mechanism in ferromagnetic-insulator-ferromagnetic spin-polarized tunneling junctions has been found by us. Based on this mechanism, we designed and fabricated a 2×2 bit Spin Tunneling Random Access Memory (STram). These junctions provide an excellent means of storing a binary data in the hard components, and sensing its remanent state by switching the soft component in such a way that the magnetic state of the hard component remains unaltered
Keywords :
giant magnetoresistance; magnetic film stores; magnetoresistive devices; random-access storage; tunnelling; GMR; STram; binary data storage; ferromagnetic-insulator-ferromagnetic spin-polarized tunneling junction; magnetic switching; remanent state; spin tunneling random access memory; Chromium; Electrical resistance measurement; Giant magnetoresistance; Insulation; Magnetic multilayers; Magnetic tunneling; Optical device fabrication; Random access memory; Resists; Sputter etching;
Journal_Title :
Magnetics, IEEE Transactions on
