Title :
Study of different spatial charge trapping distribution effect on off-state degradation at elevated temperature in power LDMOS
Author :
Kurniawan, Erry Dwi ; Vivek, N. ; Gene Sheu ; Pramudyo, Antonius Fran Yannu ; Hema, E.P. ; Shao-Ming Yang ; Chen, P.A.
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
Abstract :
Different spatial charge trapping distribution effect on off-state degradation in power LDMOS was studied. Electron trapping phenomena is thermally grown in silicon dioxide (SiO2). Due to charge can be trapped in the oxide, it can make structural defects, oxidation-induced defects, impurities, or other defects caused by Si-O-bond breaking process. This process can increase leakage current and cause off-state breakdown degradation. Many research already discussed about this mechanism, but not too much described about the distribution of charge trap into SiO2. In this paper, the distribution of charge trap in SiO2 was studied in three different spatial charge distribution: Uniform, Gaussian, and Exponential using Sentaurus TCAD simulation software. This phenomena also studied at elevated temperature 150°C compare with room temperature.
Keywords :
Gaussian distribution; MOS integrated circuits; crystal defects; electron traps; exponential distribution; leakage currents; power semiconductor devices; silicon compounds; temperature; Gaussian distribution; Sentaurus TCAD simulation software; SiO2; bond breaking process; electron trapping phenomena; elevated temperature; exponential distribution; leakage current; off-state breakdown degradation; off-state degradation; oxidation-induced defects; power LDMOS; room temperature; silicon dioxide; spatial charge trapping distribution effect; structural defects; temperature 150 degC; uniform distribution; Asia; Charge carrier processes; Degradation; Educational institutions; Electric breakdown; Silicon; Temperature distribution; elevated temperature; off-state degradation; power LDMOS; spatial charge trap distribution;
Conference_Titel :
Power Engineering and Optimization Conference (PEOCO), 2014 IEEE 8th International
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-2421-9
DOI :
10.1109/PEOCO.2014.6814425
