A ZnO/ZnMgO Multiple-Quantum-Well Ultraviolet Random Laser Diode

Author

Long, Hao ; Fang, Guojia ; Li, Songzhan ; Mo, Xiaoming ; Wang, Haoning ; Huang, Huihui ; Jiang, Qike ; Wang, Jianbo ; Zhao, Xingzhong

Author_Institution

Key Lab. of Acoust. & Photonic Mater. & Devices of Minist. of Educ., Wuhan Univ., Wuhan, China

Volume

32

Issue

1

fYear

2011

Firstpage

54

Lastpage

56

Abstract

A ZnO/ZnMgO multiple-quantum-well ultraviolet (UV) random laser diode was fabricated on a commercially available n-type GaN wafer using a radio frequency magnetron sputtering system. The electroluminescence measurements revealed that the diode exhibited fairly pure UV random lasing centered at ~370 nm under sufficient forward bias at room temperature. The full-widths at half-maximum of the sharp lasing peaks are less than 0.4 nm. The device has a very low threshold current density of 4.7 A/cm² and extremely weak visible emission.

Keywords

II-VI semiconductors; electroluminescence; magnesium compounds; quantum well lasers; semiconductor lasers; sputter deposition; wide band gap semiconductors; zinc compounds; GaN; ZnO-ZnMgO; electroluminescence; extremely weak visible emission; multiple quantum well ultraviolet random laser diode; radiofrequency magnetron sputtering system; threshold current density; Diode lasers; Laser excitation; Quantum well devices; Semiconductor lasers; Silicon; Substrates; Zinc oxide; Electroluminescence (EL); ZnO; multiple quantum wells (MQWs); random laser; ultraviolet (UV);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2089424

Filename

5645660