DocumentCode :
1388611
Title :
GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics
Author :
Liu, Xiaosen ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Volume :
32
Issue :
1
fYear :
2011
Firstpage :
27
Lastpage :
29
Abstract :
A high-performance bootstrapped comparator operating with a single-polarity power supply is demonstrated for GaN high-temperature electronics applications. The comparator features monolithically integrated enhancement-mode (E-mode) and depletion-mode (D-mode) AlGaN/GaN HEMTs. The tail current source uses an E-mode HEMT, enabling single-polarity power supply. The E-mode input stage could cover a wide voltage comparison range (from 1 to 6 V) while the bootstrapped loads are implemented with D-mode HEMTs. At room temperature, the comparator delivers a voltage gain as high as 79 V/V and a unity-gain bandwidth of 206 MHz. At 250 , a maximum voltage gain of 40 V/V and a unity-gain bandwidth of 84 MHz are obtained.
Keywords :
III-V semiconductors; aluminium compounds; bootstrap circuits; comparators (circuits); gallium compounds; high electron mobility transistors; high-temperature electronics; power supply circuits; wide band gap semiconductors; AlGaN-GaN; D-mode HEMT; E-mode HEMT; GaN; bandwidth 206 MHz; bandwidth 84 MHz; depletion-mode; enhancement-mode; high-temperature electronics; single-polarity power supply bootstrapped comparator; tail current source; temperature 250 degC; temperature 293 K to 298 K; voltage 1 V to 6 V; Aluminum gallium nitride; Bandwidth; Gain; Gallium nitride; HEMTs; MODFETs; Temperature measurement; AlGaN/GaN HEMT; bootstrapped comparator; enhancement-mode operation; monolithic integration of E/D-mode HEMT;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2088376
Filename :
5645662
Link To Document :
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