CMOS RF Power Amplifier for UHF Stationary RFID Reader

Author

Joo, Taehwan ; Lee, Hongtak ; Shim, Sunbo ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

20

Issue

2

fYear

2010

Firstpage

106

Lastpage

108

Abstract

A CMOS power amplifier (PA) for a UHF (860-960 MHz) stationary RFID reader is presented. To design a high power and power efficient CMOS PA, quasi four pair structure and integrated passive device (IPD) transformers are used. An amplitude modulation is performed through the cascode gate with a pulse shaping filter. The chips are fabricated in a 0.18 ??m CMOS process and IPD. Measurements show output power of 32.8-33.37 dBm and the power added efficiency (PAE) of 51.8-56.1% with the supply voltage 3.0 V.

Keywords

CMOS integrated circuits; UHF amplifiers; UHF filters; UHF power amplifiers; passive networks; power transformers; pulse shaping circuits; radiofrequency identification; CMOS RF power amplifier; UHF stationary RFID reader; amplitude modulation; cascode gate; frequency 860 MHz to 960 MHz; integrated passive device transformer; power added efficiency; pulse shaping filter; size 0.18 mum; voltage 3 V; CMOS RF power amplifier; Class-E; integrated passive device (IPD); quasi four pair; stationary RFID reader;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2038552

Filename

5392987