Analog Negative-Bias-Temperature-Instability Monitoring Circuit

Author

Yelten, Mustafa Berke ; Franzon, Paul D. ; Steer, Michael B.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

12

Issue

1

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

177

Lastpage

179

Abstract

A negative-bias-temperature-instability (NBTI) monitor subcircuit is presented and implemented in 65-nm CMOS technology. The subcircuit can be incorporated in various analog circuit blocks subject to different variability, stress, and aging histories. For an amplifier block, the NBTI monitor is a linear sensor, and sensing is provided as variation of the amplifier gain in response to NBTI-induced bias variation. The monitor sensitivity in this configuration is 3.15 V^-1 and is demonstrated through electrothermal stress on the amplifier circuit.

Keywords

CMOS analogue integrated circuits; amplifiers; electric sensing devices; integrated circuit reliability; thermal stresses; CMOS technology; NBTI monitor subcircuit; NBTI-induced bias variation; aging history; amplifier block; amplifier circuit; amplifier gain; analog circuit blocks; analog negative-bias temperature-instability monitoring circuit; electrothermal stress; linear sensor; monitor sensitivity; size 65 nm; stress history; variability history; Aging; Degradation; Gain; Monitoring; Temperature measurement; Temperature sensors; Voltage measurement; Amplifier; analog circuits; negative-bias temperature instability (NBTI); reliability; sensor;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2011.2178096

Filename

6095343