Title :
Analog Negative-Bias-Temperature-Instability Monitoring Circuit
Author :
Yelten, Mustafa Berke ; Franzon, Paul D. ; Steer, Michael B.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
3/1/2012 12:00:00 AM
Abstract :
A negative-bias-temperature-instability (NBTI) monitor subcircuit is presented and implemented in 65-nm CMOS technology. The subcircuit can be incorporated in various analog circuit blocks subject to different variability, stress, and aging histories. For an amplifier block, the NBTI monitor is a linear sensor, and sensing is provided as variation of the amplifier gain in response to NBTI-induced bias variation. The monitor sensitivity in this configuration is 3.15 V-1 and is demonstrated through electrothermal stress on the amplifier circuit.
Keywords :
CMOS analogue integrated circuits; amplifiers; electric sensing devices; integrated circuit reliability; thermal stresses; CMOS technology; NBTI monitor subcircuit; NBTI-induced bias variation; aging history; amplifier block; amplifier circuit; amplifier gain; analog circuit blocks; analog negative-bias temperature-instability monitoring circuit; electrothermal stress; linear sensor; monitor sensitivity; size 65 nm; stress history; variability history; Aging; Degradation; Gain; Monitoring; Temperature measurement; Temperature sensors; Voltage measurement; Amplifier; analog circuits; negative-bias temperature instability (NBTI); reliability; sensor;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2011.2178096
