DocumentCode :
1389145
Title :
Pentacene-Based Organic Phototransistor With High Sensitivity to Weak Light and Wide Dynamic Range
Author :
Zan, Hsiao-Wen ; Kao, Shih-Chin ; Ouyang, Shiang-Ruei
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
31
Issue :
2
fYear :
2010
Firstpage :
135
Lastpage :
137
Abstract :
In this letter, the channel length effect, combined with the photoelectric field effect of organic phototransistors, has been investigated for the first time. Reducing the channel length and applying a positive gate bias during illumination enhance electron trapping effectively and hence improve the photoresponsivity of a pentacene-based phototransistor. The sensing dynamic range and the photosensitivity to very weak light (in the range of microwatts per square centimeter) are also discussed through the interaction between deep trapped states, interface energy-band bending, and photoexcited electrons.
Keywords :
electron traps; organic semiconductors; photoexcitation; phototransistors; channel length effect; deep trapped states; high sensitivity weak light wide dynamic range; illumination enhance electron trapping; interface energy-band bending; pentacene-based organic phototransistor; photoelectric field effect; photoexcited electrons; photoresponsivity; positive gate bias; Channel length; pentacene; photoresponsivity; phototransistor; thin-film transistor (TFT);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2037591
Filename :
5393054
Link To Document :
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