• DocumentCode
    1389481
  • Title

    InGaAs pin photodiodes on recessed semi-insulating GaAs substrates

  • Author

    Hodson, P.D. ; Wallis, R.H. ; Davies, J.I. ; Shephard, H.E.

  • Author_Institution
    Plessey Res. Caswell Lab., Allen Clark Res. Centre, UK
  • Volume
    135
  • Issue
    1
  • fYear
    1988
  • fDate
    2/1/1988 12:00:00 AM
  • Firstpage
    2
  • Lastpage
    4
  • Abstract
    Low leakage current Ga1-xInxAs pin photodiodes have been fabricated on GaAs substrates by incorporating an GaAs/Ga1-xInxAs superlattice buffer to accommodate the lattice mismatch. Devices fabricated from Ga0.65In0.35As on n+ substrates exhibited leakage currents below 1 nA at -10 V, and external uncoated quantum efficiencies of ~47% at 1.15 μm. A growth and processing sequence for fabricating devices in recesses on semi-insulating GaAs substrates with a coplanar geometry, to allow subsequent GaAs circuit processing, has been identified, and shown not to introduce a significant leakage penalty
  • Keywords
    gallium arsenide; indium compounds; photodiodes; 1.15 micron; 10 V; GaAs substrates; GaAs-Ga1-xInxAs superlattice buffer; InGaAs pin photodiodes; external uncoated quantum efficiencies; lattice mismatch; leakage currents;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • Filename
    6822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1389481