Mechanism of charge storage in electron-beam or corona-charged silicon-dioxide electrets

Author

Günther, P.

Author_Institution

Inst. for Electroacoust., Tech. Univ. of Darmstadt, Germany

Volume

26

Issue

1

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

42

Lastpage

48

Abstract

Thermally-stimulated-discharge (TSD) measurements performed to investigate the electret charges on 1-μm-thick, wet-grown SiO₂ are discussed. Charge decay curves at room temperature for a time period of more than three years are given. Influences of charging methods and substrate doping on charge stability are also discussed. Measurements of charge decay in short- and open-circuit TSD experiments show interesting phenomena that are interpreted, including discharge current peaks at temperatures >250°C that were found in positively charged samples. An unexpected current reversal was observed in these experiments, and an explanation for this reversal is given. The generation by irradiation of traps in the bulk of SiO₂ with an electron beam is described. The Sessler method is used to calculate the traps´ mean-spatial depths

Keywords

electrets; electron traps; silicon compounds; thermally stimulated currents; 1 micron; 250 degC; 3 y; Sessler method; TSD measurements; charge decay curves; charge stability; charge storage mechanism; charging methods; corona-charged SiO₂ electrets; current reversal; discharge current peaks; electret charges; electron beam charged SiO₂ electrets; electron beam generated traps; open-circuit TSD experiments; positively charged samples; room temperature; short-circuit TSD experiments; substrate doping; thermally stimulated discharge; time period; traps´ mean-spatial depths; Charge measurement; Corona; Current measurement; Electrets; Polymers; Silicon; Stability; Substrates; Surface charging; Temperature sensors;

fLanguage

English

Journal_Title

Electrical Insulation, IEEE Transactions on

Publisher

ieee

ISSN

0018-9367

Type

jour

DOI

10.1109/14.68225

Filename

68225