Title :
Observation of a Transition From Inverse-Spin-Switch to Spin-Switch Behavior in Domain State of a Py/Nb/Py Trilayer
Author :
Hwang, Tae Jong ; Kim, Dong Ho ; Oh, Sangjun
Author_Institution :
Dept. of Phys., Yeungnam Univ., Gyeongsan, South Korea
Abstract :
We study spin switch behavior of the six bridges of bare, or pseudo spin-valve Py/Nb/Py trilayer prepared on a single chip. Magnetization measurement of both longitudinal and transverse moment on a large companion sample reveals that a significant amount of transverse component exists in the antiparallel domain (AD) state, which is originated in stray magnetic field from domain walls. The stray magnetic field induces flux lines into the Nb layer and the motion of these flux lines under the force exerted by the bias current is the main origin for inverse spin switch effect observed in the AD state of most bridges. In addition to inverse spin switch effect, we observe a peculiar behavior of a transition from inverse spin switch to spin switch behavior with decreasing temperature in one of six bridges. In order to understand the extraordinary behavior, we first note that the flux pinning should be present in this particular sample to suppress the dissipation by flux motion, then we propose that when the domain structure incidentally matches underlying distribution of pinning sites, spin switch effect in the AD state can occur by domain wall superconductivity and/or proximity effect.
Keywords :
Permalloy; ferromagnetic materials; flux flow; flux pinning; magnetic domain walls; magnetic moments; magnetic multilayers; magnetic switching; magnetic thin films; magnetic transitions; metallic thin films; niobium; proximity effect (superconductivity); spin valves; superconducting thin films; type II superconductors; Ni80Fe20-Nb-Ni80Fe20; Py-niobium-Py trilayer; antiparallel domain state; bias current; domain structure; domain wall superconductivity; ferromagnet-superconductor-ferromagnet multilayer; flux lines; flux pinning sites; inverse spin switch-spin switch transition; longitudinal moment; magnetization; proximity effect; pseudospin valve trilayer; single chip magnetic-superconductor trilayer bridges; transverse moment; Bridges; Flux pinning; Magnetic domain walls; Magnetic field measurement; Magnetic switching; Magnetization; Niobium; Semiconductor device measurement; Superconducting transition temperature; Switches; Domain wall superconductivity; F/S/F trilayer; inverse spin switch effect; spin switch effect; stray magnetic field;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2009.2032144