• DocumentCode
    1389667
  • Title

    High resistivity ZnSe coated substrates for microstrip gas chambers

  • Author

    Sudharsanan, R. ; Greenwald, A.C. ; Vakerlis, G. ; Yoganathan, M. ; Cho, H.D. ; Kadyk, J. ; Dubeau, J. ; Dixit, M.

  • Author_Institution
    Spire Corp., Bedford, MA, USA
  • Volume
    45
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    285
  • Lastpage
    289
  • Abstract
    Microstrip gas chambers (MSGCs) require substrates with sheet resistance in the range of 1013-1016 ohms/square to eliminate polarization and surface charging effects between the electrodes. Thin films of II-VI semiconductors deposited on glass or plastic substrates are attractive for this application since bulk resistivity of these semiconductors vary in the range 109-10 12 ohm-cm and films with good uniformity can be deposited over large-areas using inexpensive deposition techniques. In this paper, deposition, characterization, and fabrication of MSGCs using ZnSe thin films are reported for the first time. ZnSe thin films were deposited on glass and plastic substrates by thermal evaporation. Sheet resistance of ZnSe varied in the range of 1015 to 1016 ohms/square depending on the deposition conditions. A MSGC detector fabricated using a 0.5 μm thick ZnSe layer on glass substrate exhibited best values; gas gain of 25000 and an energy resolution of about 16.7% FWHM at a gain of 1080 for a 55Fe source
  • Keywords
    II-VI semiconductors; electric resistance; electrical conductivity; position sensitive particle detectors; semiconductor thin films; substrates; 0.5 mum; II-VI semiconductors; ZnSe; ZnSe coated substrates; ZnSe thin films; bulk resistivity; deposition; energy resolution; fabrication; gas gain; glass substrate; microstrip gas chambers; plastic substrate; sheet resistance; thermal evaporation; Conductivity; Glass; Microstrip; Plastic films; Polarization; Semiconductor thin films; Sputtering; Substrates; Surface resistance; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.682395
  • Filename
    682395