Title :
Pulse height of MIPs in an n-side silicon microstrip detector after proton irradiation with a fluence of 1×1015 p cm-2
Author :
Gomez, A. ; Kroege, W. ; Nissen, T. ; Sadrozinski, H. E W ; Wichmann, R. ; Emes, J. ; Gilchriese, M.G.D. ; Siegrist, J. ; Wappler, E. ; Unno, Y. ; Ohsugi, T.
Author_Institution :
SCIPP, California Univ., Santa Cruz, CA, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
We have irradiated an n-side silicon microstrip detector to an equivalent high energy fluence of 1×1015 p cm-2 using 55 MeV protons. We determined the median pulse height to be 0.7 fC at a bias voltage of 180 V, and deduced a depletion region of about 80 μm
Keywords :
proton effects; silicon radiation detectors; 180 V; 55 MeV; MIP; bias voltage; depletion region; equivalent high energy fluence; median pulse height; n-side Si microstrip detector; n-side silicon microstrip detector; proton irradiation; pulse height; Detectors; Face detection; Microstrip; Particle beams; Particle measurements; Protons; Pulse measurements; Silicon; Strips; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
