Title :
Thin nitride films on textured polysilicon to increase multimegabit DRAM cell charge capacity
Author :
Fazan, Pierre C. ; Lee, Roger R.
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
A technique for increasing the charge storage capacity of advanced multimegabit dynamic RAMs (DRAMs) up to 34% without changing the cell area or dielectric thickness is discussed. The technique does not require an additional masking step. A polysilicon texturing process is combined with a dielectric which has bulk-limited electrical conduction. The leakage current is not affected by this process, and the field acceleration coefficient is considerably increased.<>
Keywords :
MOS integrated circuits; VLSI; integrated circuit technology; integrated memory circuits; random-access storage; silicon compounds; Si/sub 3/N/sub 4/ dielectric films; bulk-limited electrical conduction; capacitance increase; charge storage capacity; field acceleration coefficient; leakage current; multimegabit DRAM cell charge capacity; polycrystalline Si; polysilicon texturing process; Capacitance; Capacitors; Dielectrics; EPROM; Electrodes; Leakage current; Oxidation; Random access memory; Temperature dependence; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
