GaAs MESFETs on InP substrates grown using chloride close-proximity reactor system

Author

Jeong, Jichai ; Yee, C.M.L. ; Vella-Coleiro, G.P. ; Smith, P.R. ; Chu, S.N.G. ; Davisson, P.S. ; Paczkowski, J.P.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

11

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

285

Lastpage

287

Abstract

DC and microwave characteristics of GaAs metal-semiconductor field-effect transistors (MESFETs) on InP grown using the chloride close-proximity reactor (CPR) system are reported. The FETs have an extrinsic maximum transconductance of 210 mS/mm for a drain saturation current of 110 mA/mm, a cutoff frequency of unity current gain of 13 GHz, and a maximum frequency of oscillation of 21 GHz. The dislocation density in a 1.6- mu m GaAs layer on InP is 10/sup 8/ cm/sup -2/ measured from cross-sectional transmission electron microscopy (TEM). The full width at half maximum of

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; solid-state microwave devices; substrates; transmission electron microscope examination of materials; vapour phase epitaxial growth; 13 to 21 GHz; 3 micron; DC characteristics; GaAs-InP; InP substrates; MESFETs; chloride close-proximity reactor system; cross-sectional transmission electron microscopy; cutoff frequency; dislocation density; drain saturation current; maximum frequency of oscillation; microwave characteristics; semiconductors; transconductance; Cutoff frequency; Density measurement; FETs; Gallium arsenide; Indium phosphide; Inductors; MESFETs; Reflection; Transconductance; Transmission electron microscopy;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.56476

Filename

56476