Performance of a new Schottky CdTe detector for hard X-ray spectroscopy

Author

Matsumoto, C. ; Takahashi, T. ; Takizawa, E. ; Ohno, R. ; Ozaki, T. ; Mori, E.

Author_Institution

Inst. of Space & Astronaut. Sci., Sagamihara, Japan

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

428

Lastpage

432

Abstract

We report a significant improvement of spectral properties of a cadmium telluride (CdTe) detector. This was accomplished via the use of a high quality CdTe crystal, where high Schottky barrier for the holes on a CdTe surface was formed by using a low work-function metal, indium. With a 2×2 mm² detector at a thickness of 0.5 mm: the leakage current is measured to be 0.7 nA at room temperature (20°C) and below 1 pA at -70°C for 400 V bias voltage. The low leakage current allows us to operate the detector at a higher bias voltage than for previous CdTe detectors. The energy resolution we achieved at room temperature is 1.1-2.5 keV FWHM from the energy range of 2 keV to 150 keV at 20°C without any charge-loss correction electronics. At -70°C, we obtained an energy resolution of 1.0 keV FWHM at 122 keV and 2.1 keV FWHM at 662 keV

Keywords

II-VI semiconductors; Schottky barriers; X-ray detection; X-ray spectrometers; cadmium compounds; leakage currents; semiconductor counters; CdTe-In; Schottky CdTe detector; charge-loss correction electronics; hard X-ray spectroscopy; high Schottky barrier; leakage current; low work-function metal; Cadmium compounds; Current measurement; Energy resolution; Indium; Leak detection; Leakage current; Schottky barriers; Voltage; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.682421

Filename

682421