Short pulse transfer characteristics of Al/sub x/Ga/sub 1-x/As/GaAs and Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As modulation-doped heterojunction FET´s

Author

Chandra, Amitabh ; Garbinski, Paul A. ; Shah, Nitin J. ; Kuo, Jenn-Ming ; Kopf, R.F. ; Smith, Peter R.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

11

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

306

Lastpage

308

Abstract

Short-pulse drain current versus gate voltage transfer characteristics measured for modulation-doped HFETs (MODFETs) with four donor-layer-channel-layer combinations-(1) Al/sub 0.3/Ga/sub 0.7/As-GaAs, (2) Al/sub 0.2/Ga/sub 0.8/As-GaAs, (3) Al/sub 0.3/Ga/sub 0.7/As-In/sub 0.2/Ga/sub 0.8/As, and (4) Al/sub 0.2/Ga/sub 0.8/As-In/sub 0.2/ a/sub 0.8/As-are compared with the DC transfer characteristics. The measurements are relevant to high-speed switching in HFET circuits. Significant shifts in threshold voltage are observed between the DC and short-pulse characteristics for the structures with n/sup +/-Al/sub 0.3/Ga/sub 0.7/As donor layers, while the corresponding shifts for structures with n/sup +/-Al/sub 0.2/Ga/sub 0.8/As donor layers are relatively small or virtually nonexistent.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; Al/sub x/Ga/sub 1-x/As-GaAs; Al/sub x/Ga/sub 1-x/As-In/sub y/Ga/sub 1-y/As; DC transfer characteristics; MODFETs; donor-layer-channel-layer combinations; high-speed switching; modulation-doped HFETs; semiconductors; shifts in threshold voltage; short pulse transfer characteristics; short-pulse characteristics; Digital circuits; Epitaxial layers; Gallium arsenide; HEMTs; Heterojunctions; MODFET circuits; Pulse measurements; Pulse modulation; Threshold voltage; Virtual colonoscopy;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.56483

Filename

56483